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Thermal Effects in Deep Submicron VLSI Interconnects
Abstract
Thermal effects are an inseparable aspect of electrical power distribution
and signal transmission through the interconnects in VLSI circuits due to
self-heating caused by the flow of current. They impact interconnect
design and electromigration reliability. For deep-submicron technologies,
thermal effects are increasing due to aggressive interconnect scaling and
introduction of new dielectric materials with poor thermal properties.
Furthermore, thermally accelerated failures in interconnects under
high-current short-pulse stress conditions, such as electrostatic
discharge, have become a reliability concern.
This talk will begin with an introduction to the fundamentals of thermal
effects and interconnect reliability modeling, followed by discussion of
interconnect scaling trends, and in particular, their implications for
interconnect performance, thermal effects, and reliability. The
self-consistent interconnect design approach, which comprehends both
electromigration and self-heating, will be discussed and applied to analyze
reliability and performance of various low-k/Cu interconnect systems.
Additionally, interconnect modeling and design under non steady-state
self-heating conditions will also be examined.
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