Various (but certainly not all) bugs have been fixed.  In addition:

	octman: has been improved.

	octdoc: is a new tool that lists available documentation.

	bdnet: SPROPs are printed with quotes so they can be read back in.

	musa: will simlate transistor level schematics.

	vem: there is no need for .rhosts for local vem rpc applications.

	parcar: is a new constraint generator for analog circuits.

	senscalc: is a new tool that computes sensitivity to stray capacitance.

	There are new m2c_2u pads.

	There are new sc2 pads.

	The system has been fixed to make symbolic editing in vem more useful.

		Specifically (in tech/scmos), tap.views/symbolic, contacts,
		connector-palette, layers, primitives, and mosfets have
		been modified.

		In tap.views, the design rule information has been edited
		to reflect the fact that the minimum width on NDIF and PDIF
		is now 3 lambda, rather than 2, and that both wells must be
		at least 10 lambda, not 9. Also, a 3 lambda well overlap of
		plug (actually done as a 4 overlap of cons or cops) has
		been added.

		In contacts, a few terminals on NWEL and PWEL (nwnw.* and
		pwpw.*) have been created.  The prim tool was modified to
		create these, and the connector-palette now has NWEL and
		PWEL terminals (the  3x2 and 4x2 connectors on NDIF and PDIF
		have been deleted).

		All the users need to do now to add wells to symbolic
		layouts is create a path of the appropriate width using
		the :create command, as with any other layer. 

		Since the 2 -> 3 lambda change also affected the source/drain
		width, the mosfet and xmosfet primitives and palettes were
		updated.  NOTE: this will have an effect on any layouts
		already created.  For individual cells, sparcs should take
		care of any violations, but it isn't clear that cell
		connections will be correct, since the terminal locations
		may be different.  For compatibility, the old 5.1 versions
		in tech/scmos have been preserved.